Apparatus and method for temperature measurement and/or calibration via resonant peaks in an oscillator

ABSTRACT

An apparatus and method for a temperature and calibration utilizing resonant frequency peaks in an oscillator. A circuit providing resonant peaks for utilization for temperature measurements comprising a resonator device for providing an oscillating source, a variable gain-bandwidth amplifier in parallel with the crystal/resonator for providing modulation of the gain and/or bandwidth driving the crystal/resonator, and control of resonant peaks for selection for oscillation, a first capacitor electrically coupled to the parallel combination of the input of the variable gain-bandwidth amplifier, and the resonator device for providing charge storage for oscillation, and a second capacitor electrically coupled to parallel combination of the output of the variable gain-bandwidth amplifier, and the resonator device for providing charge storage for oscillation.

This is a Divisional application of U.S. Ser. No. 14/188,075, filed onFeb. 24, 2014, assigned to a common assignee, and which is hereinincorporated by reference in its entirety.

RELATED PATENT APPLICATION

This application is related to U.S. Pat. No. 9,240,793, issued on Jan.19, 2016, assigned to a common assignee, and which is hereinincorporated by reference in its entirety.

BACKGROUND Field

The disclosure relates generally to a resonator circuit and, moreparticularly, to a system with a variable gain amplifier thereof.

Description of the Related Art

It is often required to perform temperature measurements on ICs, systemin packages and multi-chip modules, etc, since some components andsub-systems can have temperature dependent performance. Thesemeasurements are typically made with a temperature sensitive componentor structure like a diode or band gap reference. Voltage referencecircuits and oscillators are used in conjunction with semiconductordevices, integrated circuits (IC), and other applications. However,since this will be physically located at a different place on the chip(even if close) and may be made from a different material or materialstructure, there can exist a phase lag between the actual temperature ofthe component being monitored and the temperature as measured by thetemperature sensor. This phase difference can be particularlyproblematic during periods of fast temperature transients (e.g. a stepchange in temperature) as it can result in large mismatches of actualand measured temperatures. If real-time temperature monitoring isrequired, or in situations where it is not possible to wait untiltemperature transients have settled (e.g. during production test) it isnecessary to devise a solution where the actual temperature of acomponent can be measured quickly and accurately.

As discussed in U.S. Pat. No. 7,387,435 to Kishi, a temperature sensoris disclosed using a plurality of oscillator/resonator and amplifiersare utilized; a reference signal and signal are compared with adetection circuit. In a temperature sensor, especially in a temperaturesensor using a resonator, based on a frequency of one oscillator circuit(resonator), frequencies of the other one or more oscillator circuits(resonators) are measured, and frequency-temperature characteristics ofa plurality of resonators are synthesized in order to realize anaccurate temperature sensor which does not require an accurate frequencyreference regardless of a temperature change, and has a linearcharacteristic and a wide measurable temperature range. Also, twooscillator circuits have two resonators respectively with quadraticcharacteristics in which quadratic coefficients are the same and linearcharacteristics are different from each other, and a difference betweenoscillation frequencies of both oscillator circuits is obtained.

Oscillators are used to determine pressure and temperature. As discussedin U.S. Pat. No. 5,231,880 to Ward a pressure transducer is disclosed. Aplurality of crystals are used to determine both pressure andtemperature. A first crystal is used for pressure determination. Asecond crystal is used for temperature determination. A third crystal isused as a reference. Signals are compared to reference to determinepressure and temperature.

Oscillators are used for determining pressure, and one other property.As discussed in U.S. Pat. No. 5,235,844 to Bonn et al a gas propertysensor is disclosed. In this embodiment, a circuit topology includes atplurality of capacitors and inductor to establish a resonant frequency.

In these prior art embodiments, the solution to establish a sensor useda plurality of crystals, or capacitor/inductor pairs utilized variousalternative solutions.

SUMMARY

It is desirable to provide a solution to address the phase lag betweenthe actual temperature of the component being monitored and thetemperature as measured by the temperature sensor.

It is desirable to allow for real-time transient response temperaturemeasurements on the semiconductor chip.

It is desirable to provide a method that addresses other physicalvariables.

A principal object of the present disclosure is to provide a circuitthat eliminates the phase lag between the actual temperature of acomponent being monitored and the temperature as measured by thetemperature sensor.

A principal object of the present disclosure is to provide an oscillatorcircuit which allows for real-time transient response temperaturemeasurements on the semiconductor chip.

A principal object of the present disclosure is to provide an circuitthat quickly and accurately measures the step-response to a change intemperature of an oscillator or other temperature sensitive component toallow for on-the-fly temperature compensation.

Another further object of the present disclosure is to provide a methodto facilitate quick and accurate performing of multi-point temperaturecalibration within the timing limits imposed by production test.

Another further object of the present disclosure is to provide a methodby which modulating the gain and/or bandwidth of the amplifier drivingthe resonator, it is possible to control which of these resonant peaksthe circuit locks on to and oscillates.

Another further object of the present disclosure is provide anoscillator circuit that switches between two modes of operation.

Another further object of the present disclosure is to provide anoscillator that operates in an “active mode” wherein the active mode isa higher gain-bandwidth mode where the circuit locks on to the resonantpeak and oscillates at a higher frequency with only a small variation offrequency with respect to temperature. This is the clock to be used asthe main generated system clock.

Another further object of the present disclosure is to provide anoscillator that operates in a “temperature sensor mode” wherein thetemperature sensor mode is a lower gain-bandwidth mode where the circuitlocks onto a secondary resonant peak at a lower frequency, which has amuch higher frequency variation with respect to temperature. This canthus be used as a temperature sensor and used to calibrate the mainsystem clock.

Another further object of the present disclosure is to apply thismethodology to other frequency measurement techniques.

Another further object of the present disclosure to apply this method tochanges in supply voltage, pressure, light, or gas density.

Another further object of the present disclosure is to provide alternatecircuits wherein instead of changing the gain-bandwidth of the amplifieritself, a constant wide bandwidth amplifier could be used alongside anadjustable/switchable filter.

As such, an oscillator with a variable gain amplifier with improvedtemperature monitoring is disclosed.

In summary, a circuit providing resonant peaks for utilization fortemperature measurements comprising a resonant device for providing anoscillating source, a variable gain-bandwidth amplifier in parallel withsaid resonant device for providing modulation of the gain and/orbandwidth driving said resonant device, and control of resonant peaksfor selection for oscillation, a first capacitor electrically coupled tothe parallel combination of the input of said variable gain-bandwidthamplifier, and said resonant device for providing charge storage foroscillation, and a second capacitor electrically coupled to parallelcombination of the output of said variable gain-bandwidth amplifier, andsaid resonant device for providing charge storage for oscillation

In summary, a circuit providing resonant peaks for utilization fortemperature measurements comprising an adjustable/switchable filter, aconstant gain-bandwidth amplifier in parallel with saidadjustable/switchable filter for providing modulation of the gain and/orbandwidth driving said resonant device, and control of resonant peaksfor selection for oscillation.

In addition, a method is disclosed in accordance with the embodiment ofthe disclosure. A method for providing a temperature measurement andcalibration utilizing resonant peaks, comprising the steps of (A)providing a circuit on a semiconductor chip, the circuit comprising aresonant device and amplifier, (B) switching the chip on at lowtemperature in a high gain-bandwidth mode wherein the circuit startsoscillating at a first frequency, (C) measuring a first frequency, usinga reference source from a tester, (D) changing the oscillator to a lowgain-bandwidth mode wherein the circuit oscillations switch to a secondfrequency secondary peak, wherein said second frequency is lower thansaid first frequency, (E) measuring the second frequency, using thereference source from the tester, (F) using an on-chip heater orexternal heater/cooler to change the temperature of the chip, (G)measuring a third frequency, using the reference source from the tester,(H) changing the oscillator to the high gain-bandwidth mode wherein thecircuit oscillations switch back to the first frequency, (I) measuring afourth frequency, using the reference source from the tester, (J)repeating steps (F) to (I) for as many additional temperature points asnecessary, and (K) constructing a model for frequency v temperaturevariation for the second frequency secondary resonant peak, usingglobally averaged values, taking into account any frequency offset asdetermined by the second frequency. (L) constructing from the modelconstructed in step j, and the values of the first, second, third andfourth frequencies, plus additional points from step i if more than2-point calibration is required, (M) constructing a model for frequencyvs temperature variation for a fundamental resonant peak, and, (N)programming temperature compensation circuitry using the model createdin step l.

A method for providing a temperature measurement and calibrationutilizing resonant peaks wherein the second resonant peak is lower thatthe main resonant peak, comprising the steps of: (A) providing a circuiton a semiconductor chip, the circuit comprising a resonant device andamplifier, (B) switching the chip on at low temperature in a highgain-bandwidth mode wherein the circuit starts oscillating at a firstfrequency, (C) measuring a first frequency, using a reference sourcefrom a tester; (D) changing the oscillator to a low gain-bandwidth modewherein the circuit oscillations switch to a second frequency secondarypeak, wherein said second frequency is lower than said first frequency,(E) measuring the second frequency, using the reference source from thetester, (F) using an on-chip heater or external heater/cooler to changethe temperature of the chip, (G) measuring a third frequency, using thereference source from the tester, (H) changing the oscillator to thehigh gain-bandwidth mode wherein the circuit oscillations switch back tothe first frequency, (I) measuring a fourth frequency, using thereference source from the tester, (J) repeating steps e-h for as manyadditional temperature points as necessary; and (K) constructing a modelfor frequency v temperature variation for the second frequency secondaryresonant peak, using globally averaged values, taking into account anyfrequency offset as determined by the second frequency.

Other advantages will be recognized by those of ordinary skill in theart.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure and the corresponding advantages and featuresprovided thereby will be best understood and appreciated upon review ofthe following detailed description of the disclosure, taken inconjunction with the following drawings, where like numerals representlike elements, in which:

FIG. 1 is a circuit schematic of a simple oscillator with a resonantdevice and amplifier in accordance with a first embodiment of thedisclosure;

FIG. 2 is a schematic of a temperature sensor system in accordance withthe first embodiment of the disclosure;

FIG. 3 is a plot of the S21 s-parameter as a function of frequency forthe resonator; and,

FIG. 4 is a method of temperature calibration in accordance with theembodiment of the disclosure.

DETAILED DESCRIPTION

FIG. 1 is a circuit schematic of a simple oscillator with a variablegain-bandwidth amplifier in accordance with a first embodiment of thedisclosure. FIG. 1. Illustrates the circuit schematic 100 of the simpleoscillator with a variable gain-bandwidth. The circuit 100 comprises ofa resonant device 110. In parallel with the resonant device 110 is avariable gain-bandwidth amplifier 120. Capacitor C 130 is electricallyconnected to the resonant device 110 and the input of variablegain-bandwidth amplifier 120. Capacitor C 140 is electrically connectedto the resonant device, and the output of the variable gain-bandwidthamplifier 120. By modulating this gain it is possible to pick outvarious different resonant peaks in the resonant device. The resonantdevice 110 can also be an adjustable switchable filter, in parallel withan amplifier, where the amplifier is a constant wide bandwidth amplifier120. The resonant device 110 can be a discrete crystal oscillator forproviding a highly stable clock signal. In addition, the resonant devicecan be other electronic devices, or elements for providing a stableclock, Other elements for a resonant device 110 can be amicro-electromechanical (MEMS) device.

In accordance with the embodiment in the disclosure, a resonator withone or more secondary frequency peaks in its frequency spectrum inaddition to the fundamental frequency resonant peak is used. Thesecondary peaks can have different behaviors with respect to temperaturefrom the fundamental frequency resonant peak. This may also be true withrespect to other variables (e.g., supply voltage, pressure, light, orgas density, etc). By modulating the gain and/or bandwidth of theamplifier 120 driving the resonant device 110, it is possible to controlwhich of these resonant peaks the circuit locks on to and oscillates at.

The oscillator circuit 100 can thus be effectively switched between two(or more) different modes, an active mode, and a temperature sensormode. The active mode is a higher gain-bandwidth mode where the circuitlocks on to the resonant peak and oscillates at a higher frequency withonly a small variation of frequency with respect to temperature. This isthe clock to be used as the main generated system clock. The temperaturesensor mode is a lower gain-bandwidth mode where the circuit locks ontoa secondary resonant peak at a lower frequency, which has a much higherfrequency variation with respect to temperature. This can thus be usedas a temperature sensor and used to calibrate the main system clock.

The device which requires temperature compensation (and hence requiresits temperature to be measured) and the temperature sensor itself arenow one and the same thing. They are made of the same material andlocated in exactly the same place. Therefore the temperature measured bythe ‘sensor’ is by definition exactly identical at all times to thetemperature of the device being monitored. There is no phase-lag betweenthe two; this now allows for a multi-point temperature calibration to beperformed within the tight time-constraints imposed by the productiontest environment.

FIG. 2 is a schematic of a temperature sensor system in accordance withthe first embodiment of the disclosure. FIG. 2 illustrates a temperaturesystem 150. The temperature sensor 155 provides a signal to Look-Uptable 160. The Look-Up table provides input to the adder network 165. Anoptional offset network 175 provides input to the adder network 165. Theoutput of the adder 165 and Resonator 170 is provided to the Accumulator180. The output of the Accumulator 180 provides a calibrated outputsignal. The temperature sensor 155 is used to index into a look-up table(LUT) 160 which adds a small or large value to the accumulator 180depending on whether the expected frequency is too fast, or too slow.For example, if the temperature is very high and the resonator isoutputting a slower frequency than required, we add a larger value tothe accumulator 180, causing it to overflow more quickly and hencecreating the correct output frequency and vice-versa. This method toevaluate the temperature and calibration using resonant peaks associatedwith the Look-Up table (LUT) 160 will be discussed below in FIG. 4.

FIG. 3 is a plot of the s-parameter S21 as a function of frequency forthe resonator. An example of the different possible resonant peaks isshown by the S21 s-parameter of a test device. FIG. 3 with S21 parameterplot 200 contains the S21 data versus frequency 210. In the plot,resonant peaks are observable.

FIG. 4 is a method in accordance with the embodiment of the disclosure.A method is disclosed in accordance with the embodiment of thedisclosure. A method for providing a temperature measurement andcalibration utilizing resonant peaks 300, comprising the steps of afirst step 305 providing a circuit on a semiconductor chip, the circuitcomprising a resonant device and amplifier, a second step 310 switchingthe chip on at low temperature in a high gain-bandwidth mode wherein thecircuit starts oscillating at a first frequency, a third step 320measuring a first frequency, using a reference source from a tester, afourth step 330 changing the oscillator to a low gain-bandwidth modewherein the circuit oscillations switch to a second frequency secondarypeak, wherein said second frequency is lower than said first frequency,a fifth step 340 measuring the second frequency, using the referencesource from the tester, a sixth step 350 using an on-chip heater orexternal heater/cooler to change the temperature of the chip, a seventhstep 360 measuring a third frequency, using the reference source fromthe tester, a eighth step 370 changing the oscillator to the highgain-bandwidth mode wherein the circuit oscillations switch back to thefirst frequency, a ninth step 380 measuring a fourth frequency, usingthe reference source from the tester, and a tenth step 390 repeatingsteps 350 to 380 for as many additional temperature points as necessary,an eleventh step 395 constructing a model for frequency v temperaturevariation for the second frequency secondary resonant peak, usingglobally averaged values, taking into account any frequency offset asdetermined by the second frequency. This method is utilized by thesystem in FIG. 2 where the above method is integrated into the Look-Uptable.

The method of FIG. 4 can include additional steps. The method cancomprise of a twelfth step constructing from the model constructed instep j, and the values of the first, second, third and fourthfrequencies, plus additional points from step i if more than 2-pointcalibration is required, a thirteenth step constructing a model forfrequency vs temperature variation for a fundamental resonant peak, and,a final fourteenth step programming temperature compensation circuitryusing the model created in step k. This method is utilized by the systemin FIG. 2 where the above method is integrated into the Look-Up table.

In this method, it is possible to utilize different resonant peaks. Thismethodology can utilize a secondary peak, higher in frequency than thefundamental frequency. This method can also utilize the tertiary peak orsmaller peak to act as the temperature sensor.

In this method, a secondary, tertiary or smaller peak can be used to actas the main system clock and use the fundamental peak as the temperaturesensor. In this methodology, the resonant peak can be lower than themain resonant peak. Additionally, the higher gain-bandwidth can be themain generated clock, and the lower gain-bandwidth can be thetemperature sensor. In this method, a MEMS device could be constructedwhich had a main resonant peak at a lower frequency, and anotherresonant peak with well-defined response with respect to temperature ata higher frequency. In this case you would need to use a lower gainbandwidth when main generated clock is wanted, and a higher gainbandwidth when the temperature sensor is required.

In addition, the sequence of the method can be used for differentinitial conditions of lower temperature or higher temperature. Thesemiconductor chip could start initially at high temperature and then becooled rather than low temperature then heated.

The methodology in this disclosure, can be applied to other frequencymeasurement techniques to evaluate changes in other physical parameters.For example, the methodology in this disclosure could measure supplyvoltage, pressure, light, or gas density.

Other equivalent circuit embodiments are also can be utilized. Ratherthan changing the gain-bandwidth of the amplifier itself, a constantwide bandwidth amplifier could be used alongside anadjustable/switchable filter can be used instead of changing thegain-bandwidth of the amplifier itself.

It should be noted that the description and drawings merely illustratethe principles of the proposed methods and systems. It will thus beappreciated that those skilled in the art will be able to devise variousarrangements that, although not explicitly described or shown herein,embody the principles of the invention and are included within itsspirit and scope. Furthermore, all examples recited herein areprincipally intended expressly to be only for pedagogical purposes toaid the reader in understanding the principles of the proposed methodsand systems and the concepts contributed by the inventors to furtheringthe art, and are to be construed as being without limitation to suchspecifically recited examples and conditions. Moreover, all statementsherein reciting principles, aspects, and embodiments of the invention,as well as specific examples thereof, are intended to encompassequivalents thereof.

Furthermore, it should be noted that steps of various above-describedmethods and components of described systems can be performed byprogrammed computers. Herein, some embodiments are also intended tocover program storage devices, e.g., digital data storage media, whichare machine or computer readable and encode machine-executable orcomputer-executable programs of instructions, wherein said instructionsperform some or all of the steps of said above-described methods. Theprogram storage devices may be, e.g., digital memories, magnetic storagemedia such as a magnetic disks and magnetic tapes, hard drives, oroptically readable digital data storage media. The embodiments are alsointended to cover computers programmed to perform said steps of theabove-described methods.

In addition, it should be noted that the functions of the variouselements described in the present disclosure may be provided through theuse of dedicated hardware as well as hardware capable of executingsoftware in association with appropriate software. When provided by aprocessor, the functions may be provided by a single dedicatedprocessor, by a single shared processor, or by a plurality of individualprocessors, some of which may be shared. Moreover, explicit use of theterm “processor” or “controller” should not be construed to referexclusively to hardware capable of executing software, and mayimplicitly include, without limitation, digital signal processor (DSP)hardware, network processor, application specific integrated circuit(ASIC), field programmable gate array (FPGA), read only memory (ROM) forstoring software, random access memory (RAM), and non volatile storage.Other hardware, conventional and/or custom, may also be included. Thedisclosed circuits and devices may in particular be integrated on asingle semiconductor chip using various technologies.

Other advantages will be recognized by those of ordinary skill in theart. The above detailed description of the disclosure, and the examplesdescribed therein, has been presented for the purposes of illustrationand description. While the principles of the disclosure have beendescribed above in connection with a specific device, it is to beclearly understood that this description is made only by way of exampleand not as a limitation on the scope of the disclosure.

What is claimed is:
 1. A method for providing a temperature measurementand calibration utilizing resonant peaks, comprising the steps of: (a)providing a circuit on a semiconductor chip, the circuit comprising aresonant device and amplifier, (b) switching the chip on at lowtemperature in a high gain-bandwidth mode wherein the circuit startsoscillating at a first frequency; (c) measuring a first frequency, usinga reference source from a tester; (d) changing the oscillator to a lowgain-bandwidth mode wherein the circuit oscillations switch to a secondfrequency secondary peak, wherein said second frequency is lower thansaid first frequency (e) measuring the second frequency, using thereference source from the tester; (f) using an on-chip heater orexternal heater/cooler to change the temperature of the chip; (g)measuring a third frequency, using the reference source from the tester;(h) changing the oscillator to the high gain-bandwidth mode wherein thecircuit oscillations switch back to the first frequency; (i) measuring afourth frequency, using the reference source from the tester; (j)repeating steps e-h for as many additional temperature points asnecessary; and (k) constructing a model for frequency v temperaturevariation for the second frequency secondary resonant peak, usingglobally averaged values, taking into account any frequency offset asdetermined by the second frequency.
 2. The method of claim 1 furthercomprising of the step (l) constructing from the model constructed instep j, and the values of the first, second, third and fourthfrequencies, plus additional points from step i if more than 2-pointcalibration is required.
 3. The method of claim 2 further comprising thestep (m) constructing a model for frequency vs temperature variation fora fundamental resonant peak.
 4. The method of claim 3 further comprisingthe step (n) programming temperature compensation circuitry using themodel created in step k.
 5. The method of claim 1 wherein said methodutilizes the fundamental resonant peak frequency.
 6. The method of claim1 wherein said method utilizes the secondary resonant peak frequency. 7.The method of claim 1 wherein said method utilizes the tertiary peak orsmaller peak to act as the temperature sensor.
 8. The method of claim 1wherein said method can utilize a secondary, tertiary or smallerresonant peak to act as the main system clock and use the fundamentalresonant peak as the temperature sensor.
 9. The method of claim 1wherein said method is used for different initial conditions of lowertemperature or higher temperature.
 10. The method of claim 1 whereinsaid method is used for physical parameters comprising of supplyvoltage.
 11. The method of claim 1 wherein said method is used forphysical parameters comprising of pressure.
 12. The method of claim 1wherein said method is used for physical parameters comprising of gasdensity.
 13. The method of claim 1 wherein said method is used forphysical parameters comprising of light.
 14. A method for providing atemperature measurement and calibration utilizing resonant peaks whereinthe second resonant peak is lower that the main resonant peak,comprising the steps of: (a) providing a circuit on a semiconductorchip, the circuit comprising a resonant device and amplifier, (b)switching the chip on at low temperature in a high gain-bandwidth modewherein the circuit starts oscillating at a first frequency; (c)measuring a first frequency, using a reference source from a tester; (d)changing the oscillator to a low gain-bandwidth mode wherein the circuitoscillations switch to a second frequency secondary peak, wherein saidsecond frequency is lower than said first frequency (e) measuring thesecond frequency, using the reference source from the tester; (f) usingan on-chip heater or external heater/cooler to change the temperature ofthe chip; (g) measuring a third frequency, using the reference sourcefrom the tester; (h) changing the oscillator to the high gain-bandwidthmode wherein the circuit oscillations switch back to the firstfrequency; (i) measuring a fourth frequency, using the reference sourcefrom the tester; (j) repeating steps e-h for as many additionaltemperature points as necessary; and (k) constructing a model forfrequency v temperature variation for the second frequency secondaryresonant peak, using globally averaged values, taking into account anyfrequency offset as determined by the second frequency.
 15. The methodof claim 14 wherein a higher gain-bandwidth is a main generated clock,and a lower gain-bandwidth is a temperature sensor.
 16. The method ofclaim 14 wherein the second resonant peak is lower that the mainresonant peak, wherein the circuit is a micro electromechanical (MEMS)device.